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 BD533/535/537
BD533/535/537
Medium Power Linear and Switching Applications
* Low Saturation Voltage * Complement to BD534, BD536 and BD538 respectively
1
TO-220 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD533 : BD535 : BD537 : BD533 : BD535 : BD537 : BD533 : BD535 : BD537
1.Base
Value 45 60 80 45 60 80 45 60 80 5 8 1 50 150 - 65 ~ 150
Units V V V V V V V V V V A A W C C
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO IC IB PC TJ TSTG
Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICBO Parameter Collector Cut-off Current : BD533 : BD535 : BD537 Collector Cut-off Current : BD533 : BD535 : BD537 Emitter Cut-off Current * DC Current Gain : BD533/535 : BD537 : ALL DEVICE : BD533/535 : BD537 : ALL DEVICE : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5 3 12 75 100 0.8 V V V MHz Min. Typ. Max. 100 100 100 100 100 100 1 Units A A A A A A mA
ICES
IEBO hFE
hFE
hFE Groups J K
VCE = 2V, IC = 2A VCE = 2V, IC = 3A VCE = 2V, IC = 2A VCE = 2V, IC = 3A IC = 2A, IB = 0.2A IC = 6A, IB = 0.6A VCE = 2V, IC = 2A VCE = 1V, IC = 500mA
VCE(sat) VBE(on) fT
* Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product
* Pulse Test: PW =300s, duty Cycle =1.5% Pulsed
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
BD533/535/537
Typical characteristics
1000
1
100
VCE(sat)[V], SATURATION VOLTAGE
VCE = 2V
IC = 10 IB
hFE, DC CURRENT GAIN
0.1
10 0.01
0.1
1
10
0.01 0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
1.8
VBE(sat)[V], SATURATION VOLTAGE
1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.1
IC = 10 IB
IC[A], COLLECTOR CURRENT
10
IC Max.
10 ms 1m s
10
s
100s
DC
1
0.1 1 10 1 10
BD533 BD535 BD537
100
IC[A], COLLECTOR CURRENT
V CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Safe Operating Area
80
70
PC[W], POWER DISSIPATION
60
50
40
30
20
10
0 0 25 50
o
75
100
125
150
175
200
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
BD533/535/537
Package Demensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) o3.60 0.10
(1.70)
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E


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